EDN

Insulated Gate Bipolar Transistor Basics

This application note describes the basic characteristics and operating performance of IGBTs. It is intended to give the reader a thorough background on the device technology behind IXYS IGBTs. The ...
Phys.org

New method realize ohmic contacts in n-type MoS₂ transistors at cryogenic temperatures

Semiconducting transition metal dichalcogenides (TMDs) are a class of layered materials exhibiting unique optoelectronic properties that could be leveraged to develop transistors, sensors and other ...
Nature

Design, synthesis and simulation of fractional-order element using MOS transistors as distributed resistive capacitive devices

The article presents a synthesis method to design electrical circuit elements with fractional-order impedance, referred to as a Fractional-Order Element (FOE) or Fractor, that can be implemented by ...
Nature

Design of electronically tunable fractional-order elements based on distributed MOS transistor structures

This paper presents a design algorithm and implementation results for electronically tunable fractional-order elements (FOEs) with capacitive character based on distributed MOS transistor structures ...