Standardized power-semiconductor chip will extend driving range and lower power costs for xEVs Mitsubishi Electric’s new power semiconductor chip is a proprietary trench SiC-MOSFET that reduces power ...

Cree, one of the market leaders in silicon carbide (SiC) power electronics, introduced new Wolfspeed 650V SiC MOSFETs, which are envisioned for applications where efficiency is a key priority, ...

Nexperia has expanded its wide-bandgap portfolio with 1200 V silicon carbide (SiC) MOSFETs in QDPAK packaging, introducing ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation and Toshiba Corporation (collectively “Toshiba”) have developed an SiC metal oxide semiconductor field effect ...

When it comes to reliability research on SiC power devices, The Ohio State University (OSU) has been at the vanguard. Several aspects of the SiC power MOSFET reliability, including threshold voltage ...

Fifth-generation SiC MOSFETs developed by ROHM have approximately 30% lower on-resistance at high temperatures.

STMicroelectronics has revealed an advanced new product family enabling power supply designers to drive up energy efficiency in applications such as solar inverters and electric vehicles, enterprise ...

With a drain-source breakdown voltage of 1700 V, the SCT2H12NZ N-channel SiC (silicon carbide) MOSFET from ROHM is optimized for industrial applications, including high-voltage general-purpose ...

Toshiba has developed a 2,200 V silicon carbide (SiC) MOSFET for inverters and energy storage systems, in order to help inverter manufacturers to reduce the size and weight of their products. Japanese ...

Over the years, low losses possible by high breakdown field made silicon carbide (SiC) MOSFETs extremely popular amongst engineers. At present, they are mostly used in areas where IGBTs (Insulated ...

Built using back-to-back SiC MOSFETs with an optically isolated gate driver, the relays offer compact packaging in a six-pin ...

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor ...